The barium-yttrium ceramic compound used to demonstrate superconductivity will work only if supercooled to a temperature of 125 K. What is the equivalent temperature a) in °C? b) in °F?
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- (Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…Copper has mass density of 8.95 g/cm^2 and n electrical resistivity of 1.55 ×10^-8 ohm -m at room temperature. Assuming the effective mass is "mo " ,calcualte a, the concentration of the conduction electron . b,mean free time . c ,the Fermi energy.Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
- 3) a) A wire sample (1 mm in diameter by 1 m in length) of an aluminum alloy (containing 1.2% Mn) is placed in an electrical circuit such as that shown in the figure below. A voltage drop of 432 mV is measured across the length of the wire as it carries a 10 A current. Calculate the electrical conductivity of this alloy - Length, / Area, A Sample geometry b) Copper has an electrical conductivity of 58.00 x 10° S/m and a free electron density of 104 x 102'm³. Calculate the drift velocity of these electrons under an electric field of 0.5 V/m.1. The expression for free energy as a function of temperature of a system with two states, one at energy 0 and other at 2e is A) F=-k T log(1-2B) F=-k Tlog(1+2) C) F=-k Tlog(1-²0¹²) D)F=-k Tlog(1+²) E) F = k₂Tlog(1+₂³) 2. For a gas of 'N photons having definite frequency w, the specific heat at constant volume is: A) Directly proportional to T C) Directly proportional to T B) Directly proportional to 7¹2 D) Stays constant E) Inversely proportional to TAn ideal rectifying contact is formed by depositing gold on n-type silicon doped at 1015 cm-3. At T= 300 K, determine the width of the depletion region. W = 9.540 X 10-4 cm W = 2.244 X 10-4 cm W = 1.033 X 10-4 cm W = 4.151 X 10-4 cm
- Q3/ An experiment was conducted to find the relationship between the specific heat of potassium metal and the temperature, and it was found that this relationship takes the following formula at low temperatures 2.08 +2.57 T2 What is the value of each of: (1) the fermi temperature of potassium? (b) Debye temperature of potassium? Note that specific heat is measured in units of mj / mol / K.Problems Q1: Calculate the drift current density in silicon sample. If T=300 K, N=102/m*, Na=102/m’V, un=0.85m’/V.s, Up=0.04m/V.s, E=35 V/cm.. (Ans: 6.8×104A/m²).Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:
- : A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.ses2. A diffusion couple is made from nickel and iron. After 30 hours of heat treatment at 1400 K, the concentration of nickel is 3.2 wt % at a distance of 1.5 mm from interface. an identical diffusion couple is heated at 1200 K for 30 hours, at what depth from the interface will the concentration of nickel be 3.2 wt %? The pre-exponential factor (D.) and activation energy for diffusion is 1.8 x 10$ m²/s and 152 kJ/mol respectively, and the surface concentration of nickel is 100 wt%. (Note that this is a non-steady state diffusion process).A copper-constantan thermocouple generates a voltage of 4.75 x 10-3 volts when the temperature of the hot junction is 110 °C and the reference junction is kept at 0 °C. If the voltage is proportional to the difference in temperature between the junctions, what is the temperature in degrees Celsius of the hot junction when the voltage is 2.35 x 10-3 volts? Number i Units