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Solid state physics
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- List five main characteristics of ionic crystals that result from their high dissociation energy.A valence electron in a crystal absorbs a photon of wavelength, =0.300nm . This is just enough energy to allow the electron to jump from the valence band to the conduction band. What is the size of the energy gap?What is the longest wavelength for a photon that can excite a valence election into the conduction band across an energy gap of 0.80 eV?
- QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm3 donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm3 at T=400K. What is the minimum value of the band gap energy?6. Show that the Madelung constant of a one dimensional infinite ionic crystal is 1.386.There are several methods for removing electrons from the surface of a semiconductor. Can holes be removed from the surface? Explain.
- b) What are the major differences between MOS and BJT transistors? D AL J..11 1. M Abdul Hadi 200- 3QUESTION 10 The lattice energy of CsCl is 633 kJ/mol, the Madelung constant, a, is 1.763, and the Born exponent, n, is 10.7. The ionic radius of Cl- is known to be 1.81 A, e = 1.6 X 10-19 C and NA = 6.02 X 1023 atom/mol. The estimate ionic radius of Cst is: A. 1.69 Å B. 1.81 A C. 3.5 nm D. 3.5 Å1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium? MacBook Air
- Q8) Consider an n-type silicon crystal doped with 10º phosphorus (P) atoms/cm'. What are the electron and hole concentrations of this crystal if its intrinsic carrier concentration is 1 cm? Then, if it is doped with 10" boron (B) acceptors, what will be the electron and hole 10 concentrations?Q1/ Assume that the Fermi energy level is 0.25 eV above the valence band energy. Let T 300 K. %3D Determine the probability of a state being empty of an electron at E = E, - 3kT/2 -5 Note: Boltzmann Constant is 8.61 x 10 eV/KWith respect to electron energy bands in insulators, conductors and semi- conductors, the 'Energy Gap' can be defined as: a. The highest average energy states occupied by the electrons in a material at a given temperature. b. The difference in energy levels between the highest energy level of the valence energy band and the lowest energy level in the conduction band. c. The energy level which has a 50% probability of getting occupied by an electron at a given temperature. d. The difference in energy levels between the lowest energy level of the valence energy band and the highest energy level in the conduction band.
