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- Calculate the base current required to switch a resistive load of 8mA for an npn- transistor with B = 156. Lütfen birini seçin: a.113.21 pA b.84.97 µA c.66.67 µA d.96.38 pA e.51.28 µARe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? SpecifyQ1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.
- 4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE4 Q: A- For the transistor circuit shown in figure bellow 20 v Determine: 1- Ig , Ic , le and Vce · 2- Sketch the load line (Q-point) of the transistor. 470 2 270 kQ B=125 تمت الاجابة وسارفع الملف لاحقا
- g in to Internet B... CD Page view A Read alou Draw the schematic diagram showing the energy level alignment of metal-semiconductor and semiconductor-semiconductor junctions after contact under thermal equilibrium for the following cases. Note 9 = work function x = electron affinity EG = band gap Ec conduction band Ev = valence band EF = fermi level 1. Metal semiconductor EVAC OM Ec Eps EpM Ey Before contact 2. Metal semiconductor EVAC OM Os Xs Ec -- Eps EFM Ey Before contact Electron energy > Electron energy +Consider the simple transistor circuit shown, where VCE = 0.6 1. Determine IB 2. Determine IC 3. Determine β for the transistorThe emitter-base junction in a transistor has... A. Forward bias at all times B. Reverse bias at all times C. Low resistance D. None of the above D В A C
- In a transistor if a 100 and emitter current is 10mA, then Ic is A. 100 mA В. 10MA С. 100.1 mA D. None of the above A D В Ca. We discussed in class the "two conditions" that allow current to flow through a MOSFET, and "two conditions" that would not allow current to flow. Write down what these conditions are: b. Consider a n-channel MOSFET and a p-channel MOSFET. How would you connect these two transistors in order to create a basic CMOS Inverter, as discussed in class. c. Now consider a floating gate, containing electrons. Use Gauss' Law to explain whether or not inversion can occur in the channel if a positive gate voltage were to be applied d. Depending on whether or not current flows through the channel, what does this tell you about whether or not you have stored a "0" or a “1”? e. Use principles of Coulomb's Law to explain how you would remove electrons from the floating gate (i.e. to "flash" your flash memory device)5. A transistor is biased with feedback resistor Rg of 100k2. If Vcc= 25V, Rc= 1k2 and B= 200. Find the values of zero signal Ic and Vce ? 6. Find the Q-point values in the circuit. Also find the minimum power rating of the transistor -12 V 33 k2 1.8 k2 B= 50 5.6 k2 560 2
