To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?

To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 7P

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Question

To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV.

What is the concentration/s of the majority and minority charge carrier?

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