R1 300 N L1 500 mH vi(t) 20 μF R2 500 N ww L2 600 mH ww
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Consider the circuit diagram below. Compute a single equivalent impedance for
this circuit for a source frequency of ? =60 Hz. Express your final answer as a
phasor with polar coordinates. You must show your all your work for the
complex math. Include a diagram of the equivalent circuit as part of your solution.
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- A full-wave rectifier operating from a 60HZ supply develops a peak rectifier voltage of 23V. Calculate the ripple factor for the voltage across the 223µF capacitor for a load current of 76mA. RL Idc 4/3fC Vr(rms) Lütfen birini seçin: a.3.56% b.11.6% c.9.46% d.7.37% e.4.89% ίφ00ορορο)The input to a full-wave rectifier is 20 V AC (RMS). The load resistor is 20 ohms and rectifier losses are 4W. The ripple factor of the rectifier is: O A. 0.96 OB. 0.33 O C. 0.48 O D. None of the other choices are correct O E. 0.75R1 85 RB 1.5. SiliconD1 Vs 12 0.7 +1)
- Question 15 In half wave rectifier with filter, if the capacitance is increased, the ripple factor increases. True False Moving to another question will save this response. ipQ. Define m00 re riachiné.. MOo DAw the State diagream of 1011 wi thout overlaPpingThe RMS output voltage of a Full-Wave Bridge Rectifier is 20 volts, Calculate the average current (in amperes) flowing into the load resistor with 3.2 kiloohms resistance. O 0.00563 O 0.00301 O 0.00426 O -0.00261
- The circle is below(for D1-1N4148 is 1N4148 Diode). and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27 0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1) plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis) 2) [RP4] 3) [RP5]The input to a full-wave rectifier is 40 V AC (RMS). The load resistor is 10 ohms. The DC voltage at the output is: O A. 27 V O B. 18 V O C. 36 V O D. None of the other choices are correct O E. 21 VA circle with diameter D in 1000 D mil d mil has an area of cmil. Fill in the Blank.
- For Fixed Bias Configuration Solve for Ib, Ic and le. Atleast 2 decimal place. Be mindful of units. Assume Ic is not equal to le. ... 4 RC 15002 RB VCC 20V 90A/A 100k2 Ib=Blank 1 HA Ic=Blank 2mA le=Blank 3 mA Blank 1 Add your answer Blank 2 Add your answer Blank 3 Add your answera. If you do not go completely around the loop when applying Kirchhoff’s voltage law, then the algebraic sum of the voltages cannot be determined the algebraic sum of the voltages will always be positive the algebraic sum of the voltages will always be negative the algebraic sum is the voltage between the start and finish points b. A p -type semiconductor is a semiconductor doped with impurity atoms whose electron valence is +4 pentavalent impurity atoms trivalent impurity atomsFAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…