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- 13 The surfoce temperature of the oun * is obout 6000 K. Accordingly which wovelenght corresponds to the greatest 15 value of the electro etic. rodiotion from the an? Interpret your reaul 16 occor ding to the sensitiuity ofhe humon. ge. 17 18 19Aramasta Paru Tarvee Shapok: Bridge Rechifier with Aresfamerer (Vrms 115,NI 8 A full wave Ri- 670 F.5OH2 Asume Si diode used: O Draw circuit diagam. O Find Vpa Van ' Vdc JIoc' PIV,F? ODraw Inpue /anpur wavegom? N2-5 1 AMLANGIT 10. Design a suitable circuit to obtain an output waveform from a sinusoidal input of peak voltage 20 V. Assume germanium diodes 4.1V - 12.3 V
- A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 O c. 0 O d. 680.0 O e. 0.3552Ob.4.522e-6 A Oc 2.720e-5 A O d. 1.071e-4 A O e. 9.010e-6 A A Alo.35Gao.65As/Ga.As/Alo.35GA0.65As pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of Tr-96 ns. At 300 K the LED is biased with a voltage V= 2 V and the injected current at the biased voltage is I= 66 mA. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1 You are asked by your supervisor in a company to design a Alo.„Ga0.6As/GaAs/Alo Ga0.6As pn" DH surface emitting LED to be operated at 300 K emitting in air, given the following design parameters and information: 1. The semiconductors from which you will fabricate the LED is totally defect free.A Alo 35 Ga0.65As/G.AS/Alo 35Gao.65AS pn" DH LED made of very high quality semiconductors has a radiative lifetime of t,=9 ns and nonradiative of tn -96 ns. At 300 K the LED is biased with a voltage V=2 V and the injected current at the biased voltage is I= 66 m4. Calculate the number of photons extracted from the LED that are normally incident to air from the GaAs active region. O a. 3.584e17 s-1 O b. 5.300e16 s-1 O c. 6.224e15 s-1 O d. 4.904e19 s-1 O e. 4.904e21 s-1
- Plz choose the correct answer with reason 5- If a diode is forward biased, the recombination of pairs of e-h producea. Heatb. Lightc. Radiationd. All the aboveSketch circuits or diagrams for:-i. Half Wave Rectifier & its Output Rectified Waveformii. Crystalline Structure of P-Type Semiconductorsiii. Clamper iv. Biased Parallel Clipperv. Face centered cubic crystal structure*42. a. Determine VL, IL, Iz, and Ir for the network of Fig. 2.186 if R1 = 180 N. b. Repeat part (a) if R1 = 470 N. c. Determine the value of R1 that will establish maximum power conditions for the Zener diode. d. Determine the minimum value of R1 to ensure that the Zener diode is in the “on" state. Rs 220 2 IR Vz = 10 V RL VL 20 V Pz, = 400 mW Zmax FIG. 2.186 Problem 42.
- Semiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.Q6. Can we operate normal PN junction diode in breakdown region for longer duration? Give reasonA silicon layer measuring 1 micrometers thick contains an electron. if a 1D quantum well with infinite walls can accurately describe the semiconductor. Assume that the silicon's electron's effective mass is 0.26 x. (rest mass of electron) a. Determine the material's three lowest energy levels. b. What is the corresponding electron velocity at the lowest energy level if the energy can be understood as the kinetic energy of the electron?
