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Plz I need the correct answer with reason
12- LED has an advantage of
a. Long life
b. Fast on-off switching
c. Low operating voltage
d. All of the above
Step by step
Solved in 2 steps
- Plz choose the correct answer with reason 5- If a diode is forward biased, the recombination of pairs of e-h producea. Heatb. Lightc. Radiationd. All the abovePlz I need the correct answer with reason 8- The advantage of LED is a. Long lifeb. Fast on-off switching c. Low operating voltage d. All of the above1. Determine the dynamic (ac) resistance of the diode at a forward current of 10 milliAmpere using the equation below. 26 mV r'd %3D ID The dynamic (ac) resistance (in ohms) is (put values only, put up to 2 decimal places)
- Q6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added to the extent of one atom per 10° germanium atoms, find the conductivity and resistivity. Assume the following data; n¡ = 2.5 x 1013 cm-3, Hn = 3800- cm2 V. Sec' cm2 and Number of germanium atoms/ cm3 Hp 1800: V. Sec' = 4.4 x 1022.Chapter 7 homework The voltage output from a J-type thermocouple referenced to 0°C is to be used to measure temperatures from 50 to 70°C. The output voltages vary linearly over this range from 2.585 to 3.649 mV. a. If the thermocouple voltage is input to a 12-bit AD converter having a +5-V range, estimate the percent quantization error in the digital value. b. If the analog signal can be first passed through an amplifier circuit, compute the amplifier gain required to reduce the quantization error to 5% or less. c. If the ratio of signal-to-noise level (SNR) in the analog signal is 40 dB, compute the magnitude of the noise after amplification. Discuss the results of 7.40b in light of this.4 points Calculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA-1x1020/m³, ND= 1×1018, n; = 1×1015/m³, ɛ,= 11.7, and the cross section area is 1um. O 68e-6, 23e-19 O6.8e-6, 23e-19 O 6.8e-6, 2.3e-19 68e-6, 2.3e-19 2 points Determine the maiority carrier concentration(in electrons m³) and the mobility
- LANGIT 10. Design a suitable circuit to obtain an output waveform from a sinusoidal input of peak voltage 20 V. Assume germanium diodes 4.1V - 12.3 VAsiacell Q5.jpg > Determine current through each diode in the circuit,Assume diodes to be similar. 0.5 k2 Ipi 15 VConduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3
- 1. Answer the following questions a) ' Fill the table given below by comaring BJT, MOSEFT and IGBT. BJT MOSFET Draw the Symbol Switching mechanisim Switching frequency range Load current range Lossess associated with the switch Unidirectional/Bidirectional current direction b) Comapred to power diodes, what are the main features of Schottky diodes? IGBTMOA silicon crystal diode has maximum allowable value of forwarder current is 634.3 mA. What is the forward power rating?1. Draw the three (3) Equivalent Circuit of a Diode. 2. Determine the diode current (in Ampere) at 20°C for a silicon diode with reverse saturation current of 70 nanoAmpere and an applied forward bias of 0.6 volts. The constant k value is: The Temperature (in Kelvin) is: The Diode current (in Ampere) is: