In recent years, blue light-emitting diodes (LEDs) have revolutionized various technologies, yet they are facing their challenges. Discuss the any of the major technological, material, or manufacturing challenges associated with the development and widespread implementation of blue LEDs. Evaluate the impact of the challenge(s) on the future of blue LED technology. Word limit: 300 words.
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- In recent years, it has been proposed that individually finished integrated circuits (ICS) can be further combined, via additional and novel processing steps, into 3D stacks to form even more densely integrated and compact systems on silicon level. While this technique is still not fully mature, such 3D integration is likely to happen in the next five years in full force. Which of the choices below is accurate about 3D integration of ICs: O a. Increases the size of printed circuits boards. O b. Likely to extend Moore's Law. O c. Reduces the number of I/O pins on ICs. O d. Simplifies the fabrication and scaling. O e. Reduces heat dissipation.choose the correct answer with Reason2- If a semiconductor of Eg is 2eV, the maximum wavelength of photons that can be detected by a photodiode is abouta. 620 nmb. 700 nmc. 740 nmd. 1240 nma) How do you predict the character of light emitted from a nanocrystalline semiconductor irradiated with violet light will be altered as the size is reduced? b) What types of tests can you perform to help you confirm your prediction in question la? Be specific as to how you would determine the trend with size reduction.
- Emission from a particular LED has linewidth 16nm centred on the mean wavelength 561 nm. Which ONE of the following is correct? (There is only one.) (Make sure you understand the terms "coherence time" and "coherence length", and check out the similar example in Lecture 11.) Select an answer and submit. For keyboard navigation, use the up/down arrow keys to select an answer. a b с d e f The frequency bandwidth is 5.3 x 10¹4 Hz and the coherence length is tens of microns. The frequency bandwidth is 1.5 x 10¹3 Hz and the coherence time is 1 femto-second. The frequency bandwidth is 5.3 x 10¹4 Hz and the coherence length is 16 nm. The coherence length is 561 nm and the coherence time is of order 0.1 pico-seconds. The coherence length is 561 nm and the frequency is 5.3 x 10¹4 Hz. The frequency bandwidth is 1.5 x 10¹3 Hz and the coherence length is tens of microns.13 The surfoce temperature of the oun * is obout 6000 K. Accordingly which wovelenght corresponds to the greatest 15 value of the electro etic. rodiotion from the an? Interpret your reaul 16 occor ding to the sensitiuity ofhe humon. ge. 17 18 19: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.ses
- Choose the correct answer : 1. Nanomaterials differ from bulk materials in their (a) Electrical properties. (d) All the options. (c) Optical properties. (b) Magnetic properties. 2. Quantum dots are considers as: (a) 2 D structures. (b) 1 D structures. (c) 0 D structures. (d) 3 D structures. 3. Fibers or particles embedded in matrix of another material are the example as: (a) an alloy. (b) composite material. (C) crystal. (d) nanotubes. 4. What is the aspect ratio? (a) length to diameter ratio (c) diameter to length ratio. (b) length to depth ratio. (d) depth to length ratio. 5. Polymer chain immobilization at particle surface is controlled by : (a) nanocomposite. (d) electrospining. (c) electro-deposition. (b) electronic and atomic level structure.LANGIT 10. Design a suitable circuit to obtain an output waveform from a sinusoidal input of peak voltage 20 V. Assume germanium diodes 4.1V - 12.3 V1. Draw the three (3) Equivalent Circuit of a Diode. 2. Determine the diode current (in Ampere) at 20°C for a silicon diode with reverse saturation current of 70 nanoAmpere and an applied forward bias of 0.6 volts. The constant k value is: The Temperature (in Kelvin) is: The Diode current (in Ampere) is:
- Can you give me information about lasers used in optoelectronics, explaining their types, history and working principle, applications, shortly all about laser in detail?The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O c. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.... ... Apps Getting Started Thomson Reuters ADP ezLaborManaSEE MORE QUESTIONS