In a transistor amplifier =62, R = 5000 and internal resistance of the transistor is 5002. Its power amplification will be 125580 2) 33760 3) 38440 4) 55760 sed in
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- For faithful amplification by a transistor circuit, the value of VCE Should transistor for silicon А. Вe zero В. Ве 0.01V C. Not fall below 0.5 V D. Be abvove 1V D В АIn the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150A Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?
- 1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.4 Q: A- For the transistor circuit shown in figure bellow 20 v Determine: 1- Ig , Ic , le and Vce · 2- Sketch the load line (Q-point) of the transistor. 470 2 270 kQ B=125 تمت الاجابة وسارفع الملف لاحقا
- For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL VoRe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? SpecifyQ1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.
- Consider the BJT circuit in Figure 6. Assume that the following values remain constant duringthe operating conditions, B = 100 and VBE = 0.65V, (a) Determine whether the transistor is operating under cut-off, linear or saturation condition if base current is increased to 1.0 mA. Assume VCE(sat) = 0.3V. (b) If a PZT3904 transistor is used and the circuit is operating at the temperature of 100 C o .Referring to the data sheet in Appendix 1 and the circuit operating with the base current and VCE(sat) as in part (a), i. Determine the power rating of the transistor at the given operating temperature.ii. Determine the maximum value to which VCC can be adjusted without exceeding a rating.Which rating would be exceeded first? I sent Part A before this, it might be resolvedIn Fig. 14, the transistor Q₁ has ß = 50, and VBE,on = 0.7 V. 5V 5V 1200 ic 2.2ΚΩ www iB in Fig. 14. NPN transistor circuit no. 2. NPN State Conditions Cutoff VBE 0, BiB > ic>0 Forward Active iB > 0, VCE > 0.2 V PNP State Conditions Cutoff VBE> -0.5 V, VBC > -0.5 V Saturation İB > 0, BiB > ic>0 Forward Active iB > 0, VCE < -0.2 V 37. Using simple model transistor analysis, determine the value of ic in mA, to 1 decimal place. (Hint: guess the state of the transistor, calculate the relevant parameters, check calculated parameters against the conditions for the guessed state to be valid.) ic = mAIn a transistor if a 100 and emitter current is 10mA, then Ic is A. 100 mA В. 10MA С. 100.1 mA D. None of the above A D В C