B/Fill in blank . 1-The atom by ionize is .. 2-To improve the conductivity of pure semi-conductor we use .. ... 3-In P-type semi-conductor the Fermi level lies near the..... 4-The current in semi- conductor produced by... . 5-Process of adding an impurity to an intrinsic semi- conductor is called.. . .... energy equal to or greater than energy level of it

B/Fill in blank . 1-The atom by ionize is .. 2-To improve the conductivity of pure semi-conductor we use .. ... 3-In P-type semi-conductor the Fermi level lies near the..... 4-The current in semi- conductor produced by... . 5-Process of adding an impurity to an intrinsic semi- conductor is called.. . .... energy equal to or greater than energy level of it

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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a. We discussed in class the "two conditions" that allow current to flow through a MOSFET, and "two conditions" that would not allow current to flow. Write down what these conditions are: b. Consider a n-channel MOSFET and a p-channel MOSFET. How would you connect these two transistors in order to create a basic CMOS Inverter, as discussed in class. c. Now consider a floating gate, containing electrons. Use Gauss' Law to explain whether or not inversion can occur in the channel if a positive gate voltage were to be applied d. Depending on whether or not current flows through the channel, what does this tell you about whether or not you have stored a "0" or a “1”? e. Use principles of Coulomb's Law to explain how you would remove electrons from the floating gate (i.e. to "flash" your flash memory device)
Which of the following statements about drift and diffusion is FALSE? a. The diffusion current of electrons is opposite to the concentration gradient, dndx. b. In silicon with equal concentrations of electrons and holes in an electric field, the drift current of electrons is higher than the drift current of holes. c. An electric field is visible in a band diagram as a slope, where holes will move to higher energy states (drift up the slope) and electrons will move to lower energy states (drift down the slope). d. The diffusion coefficient of holes can be increased by lowering the temperature of the semiconductor.
Describe the behaviour of the chemical potential relative to the top of the valence band when p-doped silicon is brought into contact with n-doped silicon. Select one: O A. Chemical potential decreases in n- type semiconductor and increases in p-type semiconductor O B. Chemical potential increases in n- type semiconductor and decreases in p-type semiconductor O C. Chemical potential remains unchanged O D. Chemical potential increases in both semiconductors O E. Chemical potential decreases in both semiconductors
Q1) Fill in the following blanks : 1. Electrical conduction in gases was first studied in 1905 by.... 2. According to Townsend current growth process the current (1) in a electric field gap is..... 3. The breakdown criterion in a uniform field electric gap is .... 4. An electronegative gas is one in which 5. SF6 is a...
Sheet 1 Q1/ In an atom the number of electrons in 3rd shell is equal to the number of electrons in the 2nd shell. Answer the following question: a- Which is the outermost shell. b- How many electrons are there in its outermost shell. c- What is the total number of protons in the nucleus of this element. Q2/ What is the relation between the energy gap in the semiconductors and temperature? Calculate the energy gap for the silicon and the germanium at 50 C° and 400K. Q3/ compute the require temperature in C° for put a sample of germanium in order to has energy gap equal to 4.6875 x 1018J. Q4/ Two-point charges are brought closer together, increasing the force between them by a factor of 25. By what factor was their separation decreased. Q5/ Calculate the distance that separate two point charges (q1 & q2) experiences equal force, the electric field intensity on each point charge is N equal to 4 x 1020 " (Note: each point charge 1.6 x 10-19 C). C
1. Draw the three (3) Equivalent Circuit of a Diode. 2. Determine the diode current (in Ampere) at 20°C for a silicon diode with reverse saturation current of 70 nanoAmpere and an applied forward bias of 0.6 volts. The constant k value is: The Temperature (in Kelvin) is: The Diode current (in Ampere) is:
Please answer and explain to these in not less than 3 sentences. Thank you! 1. How can a sheet of copper be made to emit electrons thermionically? 2. Why do electrons cross the gap in a vacuum tube? 3. Besides tungsten, what other materials are used for cathodes in vacuum tubes? 4. What is the advantage of directly heated cathodes?
B/Fill in blank. 1-The atom by ionize is . . energy equal to or greater than energy level of it 2-To improve the conductivity of pure semi-conductor we use. 3-In P-type semi-conductor the Fermi level lies near the........ 4-The current in semi- conductor produced by.. .. 5-Process of adding an impurity to an intrinsic semi- conductor is called.. .....
The main feature of photo-detectors made of high energy gap semiconductors is that: Select one: A. Their total current is extremely large. B. They have very small dark current. C. NON of the answers is correct. D. Their absorption coefficients are quite large. E. Thin samples are needed for such detectors
The emitter-base junction in a transistor has... A. Forward bias at all times B. Reverse bias at all times C. Low resistance D. None of the above D В A C
Qlfill the blank 1-The current in semi- conductor produced by. .. 2-Processof adding an impurity to an intrinsic semi- conductor is called.. 3-pentavalent impurity is added to silicon to create... 4-The depletion region consist of.. 5-purpose of impurity pentavalent is inerease.. 6-the condition to diode operated and passes current is. „and.. . and
Question 1: For Silicon material at room temperature that has Phosphorus impurity concentration of 4x1018 cm-³. Use n; = 1×10'10 cm ³ for Silicon. Answer the following questions: %3D а. Calculate the total number of free electrons. b. Calculate the total number of the holes.. С. S Determine the location of the Fermi level with respect to intrinsic Fermi Level (Ef-E;). d. sl Explain how to make p-type semiconductor material.