2. Describe the benefits of shrinking MOSFETS. 3. Explain the short channel effect.

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Question attached below. Thank you in advance

1. Transconductance gm is an important indicator of the current control
capability of MOSFET. In the following, select all the effective methods to
increase gm and explain the reason.
(a) Shorten the channel length L.
(b) Increase the carrier mobility of the inversion layer.
(c) Increase the width W of the channel.
(d) Thin the gate insulating film.
(e) Increase the dielectric constant of the gate insulating film.
2. Describe the benefits of shrinking MOSFETS.
3. Explain the short channel effect.
Transcribed Image Text:1. Transconductance gm is an important indicator of the current control capability of MOSFET. In the following, select all the effective methods to increase gm and explain the reason. (a) Shorten the channel length L. (b) Increase the carrier mobility of the inversion layer. (c) Increase the width W of the channel. (d) Thin the gate insulating film. (e) Increase the dielectric constant of the gate insulating film. 2. Describe the benefits of shrinking MOSFETS. 3. Explain the short channel effect.
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