1. When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 350 mV, working in saturation is 800 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, what is the drain current for an applied VGS of 1400 mV?
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