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1. What is the photon energy of light at the wavelength λ = 560 nm in eV? (Planck's constant is 6.6 x 10-34 m2 kg / s)

1. What is the photon energy of light at the wavelength λ = 560 nm in eV? (Planck's constant is 6.6 x 10-34 m2 kg / s)

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Light Absorption (Photovoltaics / Mertens) 1. What is the photon energy of light at the wavelength λ = 560 nm in eV? (Planck's constant is 6.6 x 10-34 m2 kg / s) 2. What is the penetration depth of light at the wavelength λ = 560nm in c-Si (crystalline Si) and a-Si (amorphous Si)? 3. Light with a wavelength of 600 nm and an irradiance of E= 500 W/m 2 impinges vertically on to a semiconductor of amorphous silicon. At this wavelength the material has a refractive index of 4.6. a. What portion of the light is reflected at the semiconductor surface? b. What thickness and what refractive index should an anti-reflective film possess in an ideal case? Assume SiN is used as an anti-reflective film. What should the thickness of the film be in this case? (you need to look up the refractive index of SIN) 4. Given is a c-Si cell of thickness d = 140 micormeters that is illuminated by light with a strength of E= 1000 W/m 2 ,( a = 100/cm; n = 3.3; λ = 1000 nm). a. How large is the penetration depth of the light? b. How much light is reflected? C. How much light is absorbed (assumption: rear side nonreflecting)? d. How much light is absorbed when the rear side is mirrored and the front side is nonreflecting? C.
Transcribed Image Text:Light Absorption (Photovoltaics / Mertens) 1. What is the photon energy of light at the wavelength λ = 560 nm in eV? (Planck's constant is 6.6 x 10-34 m2 kg / s) 2. What is the penetration depth of light at the wavelength λ = 560nm in c-Si (crystalline Si) and a-Si (amorphous Si)? 3. Light with a wavelength of 600 nm and an irradiance of E= 500 W/m 2 impinges vertically on to a semiconductor of amorphous silicon. At this wavelength the material has a refractive index of 4.6. a. What portion of the light is reflected at the semiconductor surface? b. What thickness and what refractive index should an anti-reflective film possess in an ideal case? Assume SiN is used as an anti-reflective film. What should the thickness of the film be in this case? (you need to look up the refractive index of SIN) 4. Given is a c-Si cell of thickness d = 140 micormeters that is illuminated by light with a strength of E= 1000 W/m 2 ,( a = 100/cm; n = 3.3; λ = 1000 nm). a. How large is the penetration depth of the light? b. How much light is reflected? C. How much light is absorbed (assumption: rear side nonreflecting)? d. How much light is absorbed when the rear side is mirrored and the front side is nonreflecting? C.
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